Experimental Optimization of Annular Polishing Parameters for Silicon Carbide

Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide

Silicon Carbide (SiC) is emerging as a promising substrate for systems which leverage the low lattice mismatch with Gallium Nitride (GaN), high power density, heat dissipation and radiation hardness properties unique to this semiconductor. Wafer fabrication and polishing of SiC substrates poses processing issues as a result of the material’s high Mohs hardness (~9.25), and chemical inertness. P...

Experimental study of fracture mechanics in the aluminum matrix composites containing Fifteen percent silicon carbide particles

In this investigation ‚the fracture toughness of A356 containing15%SiC composite was studied. Al/SiC composites have been considered because of their mechanical and erosion properties .Low fracture toughness in Al/SiC as compared with Aluminium alloys is one of its disadvantage. In this study at first A356 alloy was melted in a smelting electrical furnace then poured into the mould. A356-15% Si...

Silicon Nitride and Silicon Carbide

Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed by immersing the Pt coated samples into an etching solution containing sodium persulphate and hy...

Boron carbide/n-silicon carbide heterojunction diodes